Mietek Bakowski
Forskare

Mietek Bakowski was born in Bydgoszcz, Poland, in 1946. He completed MSc studies at the faculty of Electronics at the Warsaw University of Technology 1964-1969. In 1970 he joined the research and teaching staff of the Dept. of Electron Physics III at Chalmers University of Technology, CTH, Gothenburg, Sweden, where he received the PhD degree in 1974 and the Assistant Professor competence in 1981. In 1983 he joined ASEA (later ABB), Västerås, Sweden where he worked as semiconductor specialist until 1991 with development of power devices for motor drive applications. He joined the group of Power Semiconductor Devices at the Swedish Institute of Microelectronics, Kista, in 1991 where he worked with different BiMOS and bipolar power device concepts for motor drive and HVDC applications. Since 1994 he is with the Power Electronics group at RISE working with the design, simulation and electrical evaluation of SiC and GaN devices. The main focus of his activities has been the physics of operation, design, technology, reliability and applications of power semiconductor and MOS devices. He has been Adjoint Professor at dept. of Solid State Physics at KTH, Electrum, Kista, (2000 - 2003) and was appointed Affiliated professor at KTH School of Engineering Sciences in 2012. He is a co-organizer of ECS Symp. GaN and SiC Power Technologies (since 2012) and a member of International Advisory Committee to New National Program (2017-2023) on WBG semiconductors in Busan City, South Korea. Dr. Bakowski is a lead organizer of the International Workshop on Applications of WBG Power Electronics, SCAPE (ISICPEAW) and a Senior Expert and manager of WBG Power Center at RISE.
- Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 k…
- Single Event Effects in 3.3 kV 4H-SiC MOSFETs Due to MeV Ion Impact
- Parametric Study of Damage Evolution in Silver Sintered Layers of Double Sided …
- Wide bandgap semiconductor based innovative green technology for digital and in…
- Measurement and Analysis of Body Diode Stress of 3.3 kV Sic-Mosfets with Intrin…
- Tailoring the Charge Carrier Lifetime Distribution of 10 kV SiC PiN Diodes by P…
- Theoretical Benchmarking of Vertical GaN Devices
- Static and Dynamic Performance of Charge-Carrier Lifetime-Tailored High-Voltage…
- Ceramic Additive Manufacturing Potential for Power Electronics Packaging
- Low Inductive SiC Power Electronics Module with Flexible PCB Interconnections a…