Silicon Carbide (SiC) Technology – From Concept to Pilot Production

End-to-End Solution in SiC Power Electronics, Detectors and Sensor Devices

Whether you are developing MOSFETs, high voltage diodes, IGBTs or advanced device architectures, RISE is your single partner for the entire SiC development flow.

A True End-to-End SiC Solution

RISE supports every stage of your SiC project under one roof:

• Device concept, design & TCAD simulation
• Custom SiC epitaxial growth
• Wafer processing & cleanroom prototyping
• Electrical characterization, ruggedness and reliability assessment
• Pilot production and process transfer

By integrating material, device, and process expertise, we eliminate handovers, shorten development cycles, and ensure your device performs as intended – from first wafer to pilot scale.

Why Companies Choose RISE

End-to-End Responsibility
We take responsibility for the complete SiC development chain, reducing technical risk and accelerating time-to-market.

Custom SiC Epitaxy — Built for Your Device
Our flexible epitaxy service delivers wafers tailored to your exact device requirements, from standard MOSFET structures to complex multi-layer and high-voltage designs.

From Prototype to Pilot Production
With pilot production volumes RISE bridges the gap between R&D and manufacturing – enabling smooth scale-up without redesign.

30+ Years of SiC and Wide Bandgap Expertise
RISE has been at the forefront of SiC power devices since the early 1990s, partnering with leading industrial and research organizations worldwide. And our team are recognized world experts.

Advanced Capabilities that Enable True Differentiation

• Thick epitaxy up to 250µm for high-voltage and ultra high-voltage devices
• Multi-layer and regrowth epitaxy for IGBTs, BJTs, super-junction, buried structures
• Support for 200mm, 150mm and 100mm wafers
• Industry-leading epi quality 

All development and pilot production are carried out in-house at the RISE SiC Technology Pilot Line in Kista, Stockholm.

Designed for Industrial Impact

The RISE End-to-End Power Semiconductor SiC Device Technology is more than just manufacturing – it’s a collaborative partnership. We work closely with your team to optimize the link between epitaxial structure, device design, and system-level performance.

From first prototype to pilot production, we help you innovate faster, reduce risk, and reach the market with confidence supporting demanding applications across:

• Automotive and transport electrification
• Data centres and high-efficiency power infrastructure
• Defence and mission-critical systems
• Renewable energy and energy storage
• Industrial power and automation
• Rail and power grid infrastructure

Our focus is not just material quality – but device performance, manufacturability, and commercial readiness.

Beyond Power Electronics – SiC Detectors and Sensor Devices

In addition to power electronic components, at RISE we also support the development and manufacturing of silicon carbide based detectors and sensor devices. The same end to end infrastructure used for advanced power devices is directly applicable to a wide range of high performance sensing applications.

Examples of supported device types include:

• Radiation detectors for harsh environments
• Gas and chemical sensors based on Schottky and MOS structures
• Temperature and pressure sensors for high temperature operation
• Photodetectors and avalanche structures for UV and deep UV

Why SiC is ideal for sensing
SiC offers a unique combination of wide band gap, high thermal stability, excellent radiation tolerance and chemical robustness, making it well suited for sensors and detectors operating in extreme environments where silicon cannot be used.

Ready to Develop Your Custom SiC Device?

Ready to accelerate your customized SiC device innovation? Connect with our experts and discover how RISE's can transform your device concept into reality – from customized epitaxy to validated performance.