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Master thesis: Investigation of GaN based HEMTs for power electronic and RF applications

About RISE
Research Institutes of Sweden (RISE) is an independent government research institute. The project will be performed at Nanotechnology Unit at RISE’s premises in Kista over a 6-month period, the project starting time in the beginning 2022 can be discussed.

In Europe, wide bandgap semiconductor technology has been an active research area with great effort from academic, military and industrial stakeholders. RISE has been involved in several EU FP6, FP7 and H2020 research and development projects regarding GaN and SiC related RF and power electronic devices for different applications. For instance, our ongoing EU UltimateGaN project on GaN technologies to address the future GaN roadmap http://www.ultimategan.eu/.

GaN is playing an increasingly important role in various emerging markets for a wide range of new functions that enhance vehicle and smart grid performance in energy-saving, as well as in all high-voltage industrial scenarios. A team at RISE is aiming to provide solutions utilizing their expertise on GaN technology to make contributions to related societal challenges in digitalisation, energy efficiency and mobility of the future.

Purpose of the project
Whenever silicon-based semiconductors devices reach their limits, GaN based devices are promising candidates enabling higher switching frequencies together with higher energy conversion efficiencies. This thesis project is a part of a couple of ongoing projects at Nanotechnology Unit at RISE, which focus on GaN based High Electron Mobility Transistor (HEMT) for power electronic and RF applications. The master-degree student(s) will be involved mainly in characterizations of various GaN based HEMTs on different substrates, such as on Si, SiC and sapphire.

The power density of HEMTs with different numbers of gate fingers will be investigated and compared regarding output current rate, as well as the RF performance of the HEMTs with different gate length. Then, the analysis results regarding breakdown voltage, power efficiency, thermal stability and bandwidths will be utilized to optimize the HEMT devices for working at harsh environment including under radiation and high or low-temperature operating conditions.

Project activities will include

  • Literature survey on the state-of-the-art in the frame of the project objectives.
  • Characterization and performance comparison of various fabricated HEMTs at RISE.
  • Result analysis for better understanding of the carrier transport mechanisms of the devices.
  • Final report (Master’s thesis).

Who are you?
We are looking for the master student(s) in nanotechnology and microelectronics or equivalent, who can complete their degree project during the spring 2022. Relevant courses as well as lab experience are considered merits.

Welcome with your application!
If this sounds exciting and you would like to know more, please contact Qin Wang, Senior Expert, +46 707727838. Final application date is November 30, 2021. Inteviews might take place continuously during the application period.

Om jobbet




Visstidsanställning 3-6 månader

Job type

Student - examensarbete/praktik


Qin Wang
+46 70 772 78 38



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