SiC power MOSFETs performance, robustness and reliability - status and trends
Are you interested in learning more about semiconductors with wide bandgap, such as silicon carbide and gallium nitride? Or, to start projects partly financed by the Energimyndigheten's programs within the same area? If you are, then the seminar organized on November 22th by the WBG Power Center, might be something for you.
RISE with partners organizes, as part of the WBG Power Center - an initiative by RISE, KTH and Swerim, a seminar with an aim of spreading experiences with SiC and GaN, but also reaching out to new partners and companies.
Alberto Castellazzi, professor at Nottingham University, will talk about the reliability of silicon carbide MOSFETs. He has been researching power electronics for nearly 20 years, and here he is particularly looking at robustness - that is, how much SiC transistors can withstand extreme stresses, such as short circuit events, which are a serious failure mode in many applications.
Alberto Castellazzi also presents the development of SiC MOSFETs – with voltage ratings from 650 V up to 3.3 kV - during the last seven years.
The seminar is introduced by Hans-Olof Dahlberg from the Swedish Energy Agency, who provides a brief presentation of the BBG program (Bredbandgapselektronik i energieffektivare kraftelektroniktillämpningar) and inform about on ongoing projects.
Information about the event
Date: November 22, 2018
Time: 10.00 - 12.00
Location: KTH, Teknikringen 33, Stockholm (Main floor, Room Ivar Herlitz)