Mietek Bakowski was born in Bydgoszcz, Poland, in 1946. 1964-1969 he completed MSc studies at the faculty of Electronics at the Warsaw University of Technology, Warsaw. He left Poland 1969 and 1970 he joined the research and teaching staff of the Dept. of Electron Physics III at Chalmers University of Technology, CTH, Gothenburg, Sweden, where he received the PhD degree in 1974 and the Assistant Professor competence in 1981. During his stay at the CTH he worked with development and application of non-destructive electrical methods for characterisation of high voltage thyristors and MOS and MNOS devices. He also worked with development and application of 2D numerical methods for calculation of electric field and breakdown in high voltage thyristors and diodes. At two occasions, 1975/76 and 1977/78 he stayed as a guest researcher at the Jet Propulsion Laboratory, Pasadena, California, USA where he worked with development and application of avalanche injection methods for studies of oxide reliability problems in MOS devices. For his work he was presented 1980 with a Certificate of Recognition by National Aeronautics and Space Administration, NASA. In 1983 Dr. Bakowski joined the Semiconductor Development department at ASEA (later ASEA Drives and ABB Drives AB), Västerås, Sweden where he worked as semiconductor specialist until 1991 with development of power devices for motor drive applications. His activities included design, development and evaluation of GTO thyristors as well as research co-operation with Electronics Departments at Uppsala University and Chalmers University of Technology and with Swedish Institute of Microelectronics. He was project leader for GTO development projects and supervised a number of graduate works related to thyristor and GTO development. In 1991 he joined the group of Power Semiconductor Devices at the Swedish Institute of Microelectronics, Kista, where he worked with development and evaluation of different BiMOS and bipolar power device concepts for motor drive and HVDC applications. He was project leader for the Fine Pattern GTO thyristor (so called Compact GTO) and the High-Power Thyristor with MOSFET controlled shorts (MCSh) projects and participated in the high power MCT type thyristor development (QCT) project within joint ABB and NUTEK power device program 1991-1994. Since 1994 he is with the Silicon Carbide Electronics group at the Industrial Microelectronics Center, Kista, (nowadays Acreo) working with the design, simulation and electrical evaluation of Silicon Carbide devices. He has been involved in design, fabrication and evaluation of SiC Schottky barrier and PiN rectifiers and radiation detectors and SiC JFETs and MOSFETs. In 2000 he has been appointed Adjoint Professor at department of Solid State Physics (FTE) at KTH, Electrum, Kista (now MPS/IMIT), the position he held until 2003. In 2012 he has been appointed Affiliated professor at KTH School of Engineering Sciences. The main focus of research, development and teaching of Dr. Bakowski has been the physics of operation, design, technology, reliability and applications of power semiconductor and MOS devices. He is author and co-author of over 100 publications and 25 US patents. Since 2012, he is a co-organizer of ECS Symp. GaN and SiC Power Technologies and was an Associate Editor of a Special Issue of IEEE Trans. Power Electronics and a Special Issue of IEEE Trans. Electron Devices on “Wide Bandgap Power Electronics” published in May 2014 and February 2015, respectively. Dr. Bakowski is a member of International Advisory Committee to New National Program, Smart Power Semi-South Korea, 2017-2023, and a co-chair of SiC Materials and Devices group for International Technology Roadmap for Wide-bandgap Semiconductors (ITRW) initiated by IEEE Power Electronics Society (PELS) 2015. Dr. Bakowski is a lead organizer of the International Workshop on Applications of WBG Power Electronics, SCAPE (ISICPEAW) and holds presently a position of Senior Expert and manager of WBG Power Center at RISE Acreo.